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october 2010 doc id 17445 rev 2 1/12 12 STN4NF20L n-channel 200 v, 1.1 , 1 a sot-223 low gate charge stripfet? ii power mosfet features 100% avalanche tested low gate charge exceptional dv /dt capability application switching applications description this n-channel 200 v realized with stmicroelectronics unique stripfet? process has specifically been designed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced high efficiency isolated dc-dc converters. figure 1. internal schematic diagram order code v dss r ds(on) max. i d STN4NF20L 200 v < 1.5 1 a sot-223 1 2 2 3 !-v $ ' 3 table 1. device summary order code marking package packaging STN4NF20L 4nf20l sot-223 tape and reel www.st.com
contents STN4NF20L 2/12 doc id 17445 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STN4NF20L electrical ratings doc id 17445 rev 2 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 20 v i d drain current continuous t c = 25 c 1 a i d drain current continuous t c = 100 c 0.63 a i dm (1) 1. pulse width limited by safe operating area. drain current pulsed 4 a p tot (2) 2. this value is rated according to rthj-amb 10 sec. total dissipation at t c = 25 c 3.3 w dv/dt (3) 3. isd 1 a, di/dt 200 a/s, v dd 80% v (br)dss. peak diode recovery voltage slope 20 v/ns t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit r thj-amb (1) 1. when mounted on 1 inch2 fr-4 board, 2 oz. cu, (t < 10 sec). thermal resistance junction to ambient 38 c/w r thj-amb (2) 2. when mounted on 1 inch2 fr-4 board, 2 oz. cu, (t > 10 sec). 62.5 c/w table 4. thermal data symbol parameter value unit i ar avalanche current, repetetive or not repetetive (1) 1. pulse width limited by t jmax. 1a e as single pulse avalanche energy (2) 2. starting t j = 25 c, i d = i ar , v dd = 50 v. 90 mj
electrical characteristics STN4NF20L 4/12 doc id 17445 rev 2 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v, v ds =0 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 1 2 3 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 0.5 a v gs = 5 v, i d = 0.5 a 1.1 1.13 1.5 1.55 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 150 30 4 - pf pf pf r g instrinsic gate resistance f=1 mhz open drain - 5.5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 160 v, i d = 1 a, v gs = 10 v (see figure 13 ) - 0.9 2.6 6.9 - nc nc nc table 7. switching times symbol parameter test conditions min. typ. max unit t d(v) t r t f t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 100 v, i d = 0.5 a, r g = 4.7 , v gs = 10 v (see figure 12 ) - 3.6 2 10.4 15.4 - ns ns ns ns
STN4NF20L electrical characteristics doc id 17445 rev 2 5/12 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 1 4 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 1 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1 a, di/dt = 100 a/s v dd = 60 v (see figure 14 ) - 51 90 3.5 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 14 ) - 56 105 3.7 ns nc a
electrical characteristics STN4NF20L 6/12 doc id 17445 rev 2 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s 0.01 tj=150c tc=25c s ingle p u l s e am0 8 1 8 5v1 i d 3 2 1 0 0 10 v d s (v) 20 (a) 4 5 4v 5v 3 v v g s =10v 6 am0 8 1 8 6v1 i d 3 2 1 0 0 4 v g s (v) 8 (a) 2 6 4 5 1 3 57 9 v d s =15v am0 8 1 8 7v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.99 1.01 1.0 3 1.05 0.97 1.07 1.09 1.11 am0 8 1 88 v1 r d s (on) 1.06 1.04 1.02 1 0 0.4 i d (a) (ohm) 0.2 0.6 1.0 8 i d =0.5a v g s =10v 0. 8 1 v g s =5v am0 8 1 8 9v1
STN4NF20L electrical characteristics doc id 17445 rev 2 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature v g s 6 4 2 0 0 1 q g (nc) (v) 4 8 2 3 10 v dd =160v i d =1a 5 12 3 00 200 100 0 400 500 v d s v g s 6 7 8 am0 8 190v1 c 3 00 200 100 0 3 0 50 v d s (v) (pf) 40 60 ci ss co ss cr ss 20 10 0 am0 8 191v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 am0 8 192v1 r d s (on) 1.9 1.5 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.9 1.1 1. 3 1.7 2.1 am0 8 19 3 v1
test circuits STN4NF20L 8/12 doc id 17445 rev 2 3 test circuits figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefor m figure 17. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STN4NF20L package mechanical data doc id 17445 rev 2 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STN4NF20L 10/12 doc id 17445 rev 2 dim. mm. min. typ max. a 1. 8 0 a1 0.02 0.1 b 0.60 0.70 0. 8 5 b1 2. 9 0 3 .00 3 .15 c 0.24 0.26 0. 3 5 d6. 3 0 6.50 6.70 e2. 3 0 e1 4.60 e 3 . 3 0 3 .50 3 .70 h 6.70 7.00 7. 3 0 v 10 o s ot-22 3 mechanical data 0046067_l
STN4NF20L revision history doc id 17445 rev 2 11/12 5 revision history table 9. document revision history date revision changes 29-apr-2010 1 first release. 11-oct-2010 2 document stat us promoted from preliminary data to datasheet.
STN4NF20L 12/12 doc id 17445 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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